Synthesis of novel materials such as transparent conducting oxides (TCOs) and diamond like coatings (DLCs) is the key project of any fabrication lab in today’s semiconductor industry. The majority of developments are still made using lab scale systems, and transferring them to larger scale production lines is often a challenging task. It is seen that producing the same input parameters results in different film properties deposited in different tools. Typical external parameters (RF power and precursor flow rate) are quoted by researchers/industrialists to define plasma experiments so that other researchers can replicate.
However, for plasma reactors with different geometries, knowing external parameters is near useless for scale-up and process transfer. The important question is which parameters can provide a better prediction of plasma processes, and the best solution is to monitor the intrinsic parameters such as the ion energy and ion flux. Here we will learn about issues concerning (i) process transfer and chambers, (ii) parameters affecting the materials.
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